Vishay Siliconix - SIHG24N65E-E3

KEY Part #: K6416980

SIHG24N65E-E3 Pricing (USD) [22071PC Stock]

  • 1 pcs$1.86733
  • 500 pcs$1.77038

Nimewo Pati:
SIHG24N65E-E3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 650V 24A TO247AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHG24N65E-E3 electronic components. SIHG24N65E-E3 can be shipped within 24 hours after order. If you have any demands for SIHG24N65E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG24N65E-E3 Atribi pwodwi yo

Nimewo Pati : SIHG24N65E-E3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 650V 24A TO247AC
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 24A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 145 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2740pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AC
Pake / Ka : TO-247-3