Toshiba Semiconductor and Storage - TK30E06N1,S1X

KEY Part #: K6397351

TK30E06N1,S1X Pricing (USD) [94465PC Stock]

  • 1 pcs$0.45573
  • 50 pcs$0.33309
  • 100 pcs$0.29014
  • 500 pcs$0.21491
  • 1,000 pcs$0.17193

Nimewo Pati:
TK30E06N1,S1X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 60V 43A TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Tiristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK30E06N1,S1X Atribi pwodwi yo

Nimewo Pati : TK30E06N1,S1X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 60V 43A TO-220
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 15 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1050pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 53W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3