Nimewo Pati :
SI4472DY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 150V 7.7A 8-SOIC
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
8V, 10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
43nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1735pF @ 50V
Disipasyon Pouvwa (Max) :
3.1W (Ta), 5.9W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)