Nimewo Pati :
SQV120N10-3M8_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 100V 120A TO262-3
Seri :
Automotive, AEC-Q101, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
190nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
7230pF @ 25V
Disipasyon Pouvwa (Max) :
250W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-262-3
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA