Vishay Siliconix - SQV120N10-3M8_GE3

KEY Part #: K6417897

SQV120N10-3M8_GE3 Pricing (USD) [45191PC Stock]

  • 1 pcs$0.86522

Nimewo Pati:
SQV120N10-3M8_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 100V 120A TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR, Tiristors - SCR - Modil yo and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SQV120N10-3M8_GE3 electronic components. SQV120N10-3M8_GE3 can be shipped within 24 hours after order. If you have any demands for SQV120N10-3M8_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQV120N10-3M8_GE3 Atribi pwodwi yo

Nimewo Pati : SQV120N10-3M8_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 120A TO262-3
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 7230pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Ou ka enterese tou
  • BS107P

    Diodes Incorporated

    MOSFET N-CH 200V 120MA TO92-3.

  • IRFR3607TRPBF

    Infineon Technologies

    MOSFET N-CH 75V 56A DPAK.

  • IXTY2N100P

    IXYS

    MOSFET N-CH 1000V 2A TO-252.

  • TK8A60W,S4VX

    Toshiba Semiconductor and Storage

    MOSFET N CH 600V 8A TO-220SIS.

  • SPA11N60CFDXKSA1

    Infineon Technologies

    MOSFET N-CH 600V 11A TO220-3.

  • IPA65R190E6XKSA1

    Infineon Technologies

    MOSFET N-CH 650V 20.2A TO220.