RGT8NS65DGTL Pricing (USD) [166793PC Stock]
- 1 pcs$0.22287
- 1,000 pcs$0.22176
- 2,000 pcs$0.20697
- 5,000 pcs$0.19712
- Nimewo Pati:
- RGT8NS65DGTL
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- IGBT 650V 8A 65W TO-263S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RGT8NS65DGTL electronic components. RGT8NS65DGTL can be shipped within 24 hours after order. If you have any demands for RGT8NS65DGTL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGT8NS65DGTL Atribi pwodwi yo
Nimewo Pati :
RGT8NS65DGTL
Manifakti :
Rohm Semiconductor
Deskripsyon :
IGBT 650V 8A 65W TO-263S
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
650V
Kouran - Pèseptè (Ic) (Max) :
8A
Kouran - Pèseptè batman (Icm) :
12A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Pouvwa - Max :
65W
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
13.5nC
Td (on / off) @ 25 ° C :
17ns/69ns
Kondisyon egzamen an :
400V, 4A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) :
40ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
LPDS (TO-263S)
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