[13559PC Stock]
- Nimewo Pati:
- IRFPS29N60LPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 600V 29A SUPER247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFPS29N60LPBF electronic components. IRFPS29N60LPBF can be shipped within 24 hours after order. If you have any demands for IRFPS29N60LPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFPS29N60LPBF Atribi pwodwi yo
Nimewo Pati :
IRFPS29N60LPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 29A SUPER247
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
210 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6160pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
SUPER-247™ (TO-274AA)
Pake / Ka :
TO-274AA
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