Renesas Electronics America - N0434N-S23-AY

KEY Part #: K6393834

N0434N-S23-AY Pricing (USD) [129008PC Stock]

  • 1 pcs$0.32827
  • 1,000 pcs$0.32664

Nimewo Pati:
N0434N-S23-AY
Manifakti:
Renesas Electronics America
Detaye deskripsyon:
MOSFET N-CH 40V 100A TO-262.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Transistors - JFETs and Tiristors - SCR ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

N0434N-S23-AY Atribi pwodwi yo

Nimewo Pati : N0434N-S23-AY
Manifakti : Renesas Electronics America
Deskripsyon : MOSFET N-CH 40V 100A TO-262
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3.7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5550pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta), 119W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA