TK35N65W5,S1F Pricing (USD) [13802PC Stock]
- 1 pcs$4.00596
- Nimewo Pati:
- TK35N65W5,S1F
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 650V 35A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK35N65W5,S1F electronic components. TK35N65W5,S1F can be shipped within 24 hours after order. If you have any demands for TK35N65W5,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35N65W5,S1F Atribi pwodwi yo
Nimewo Pati :
TK35N65W5,S1F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 650V 35A TO-247
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
35A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
95 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 2.1mA
Chaje Gate (Qg) (Max) @ Vgs :
115nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
4100pF @ 300V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
270W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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