PSMN8R5-100ESQ Pricing (USD) [50279PC Stock]
- 1 pcs$0.77767
- 10 pcs$0.70408
- 100 pcs$0.56581
- 500 pcs$0.44009
- 1,000 pcs$0.34494
- Nimewo Pati:
- PSMN8R5-100ESQ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 100A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Rèkteur - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PSMN8R5-100ESQ electronic components. PSMN8R5-100ESQ can be shipped within 24 hours after order. If you have any demands for PSMN8R5-100ESQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN8R5-100ESQ Atribi pwodwi yo
Nimewo Pati :
PSMN8R5-100ESQ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 100A I2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8.5 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5512pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
263W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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