IXYS - IXFH46N65X2

KEY Part #: K6394732

IXFH46N65X2 Pricing (USD) [15730PC Stock]

  • 1 pcs$3.51679
  • 10 pcs$3.16334
  • 100 pcs$2.60079
  • 500 pcs$2.17904
  • 1,000 pcs$1.89787

Nimewo Pati:
IXFH46N65X2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 650V 46A TO-247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFH46N65X2 electronic components. IXFH46N65X2 can be shipped within 24 hours after order. If you have any demands for IXFH46N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFH46N65X2 Atribi pwodwi yo

Nimewo Pati : IXFH46N65X2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 650V 46A TO-247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 46A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 76 mOhm @ 23A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 75nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4810pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 660W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3