Vishay Siliconix - SIA928DJ-T1-GE3

KEY Part #: K6525479

SIA928DJ-T1-GE3 Pricing (USD) [498195PC Stock]

  • 1 pcs$0.07424
  • 3,000 pcs$0.07013

Nimewo Pati:
SIA928DJ-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 30V POWERPAK SC70-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIA928DJ-T1-GE3 electronic components. SIA928DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA928DJ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIA928DJ-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIA928DJ-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V POWERPAK SC70-6
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)
RD sou (Max) @ Id, Vgs : 25 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 490pF @ 15V
Pouvwa - Max : 7.8W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SC-70-6 Dual
Pake Aparèy Founisè : PowerPAK® SC-70-6 Dual

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