Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH 100V 1A SSOT-6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A
RD sou (Max) @ Id, Vgs :
500 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
153pF @ 50V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
SuperSOT™-6