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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NTLJD2105LTBG

ON Semiconductor - NTLJD2105LTBG

KEY Part #: K6524365

[3856PC Stock]

    Nimewo Pati:
    NTLJD2105LTBG
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N/P-CH 8V 2.5A 6-WDFN.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NTLJD2105LTBG electronic components. NTLJD2105LTBG can be shipped within 24 hours after order. If you have any demands for NTLJD2105LTBG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTLJD2105LTBG Atribi pwodwi yo

    Nimewo Pati : NTLJD2105LTBG
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N/P-CH 8V 2.5A 6-WDFN
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 8V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A
    RD sou (Max) @ Id, Vgs : 50 mOhm @ 4A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 520mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-WDFN Exposed Pad
    Pake Aparèy Founisè : 6-WDFN (2x2)

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