C2M0280120D Pricing (USD) [16406PC Stock]
- 1 pcs$2.51199
- Nimewo Pati:
- C2M0280120D
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- MOSFET N-CH 1200V 10A TO-247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C2M0280120D electronic components. C2M0280120D can be shipped within 24 hours after order. If you have any demands for C2M0280120D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C2M0280120D Atribi pwodwi yo
Nimewo Pati :
C2M0280120D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CH 1200V 10A TO-247-3
Seri :
Z-FET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
370 mOhm @ 6A, 20V
Vgs (th) (Max) @ Id :
2.8V @ 1.25mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs :
20.4nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
259pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
62.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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