SI8851EDB-T2-E1 Pricing (USD) [349207PC Stock]
- 1 pcs$0.10592
- 3,000 pcs$0.09967
- Nimewo Pati:
- SI8851EDB-T2-E1
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 20V 7.7A MICRO FOOT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Diodes - Zener - Single, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8851EDB-T2-E1 electronic components. SI8851EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8851EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8851EDB-T2-E1 Atribi pwodwi yo
Nimewo Pati :
SI8851EDB-T2-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 20V 7.7A MICRO FOOT
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
8 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 8V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
6900pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
660mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Power Micro Foot® (2.4x2)
Pake / Ka :
30-XFBGA
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