FQB33N10LTM Pricing (USD) [114369PC Stock]
- 1 pcs$0.32340
- 800 pcs$0.30346
- Nimewo Pati:
- FQB33N10LTM
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 33A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQB33N10LTM electronic components. FQB33N10LTM can be shipped within 24 hours after order. If you have any demands for FQB33N10LTM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQB33N10LTM Atribi pwodwi yo
Nimewo Pati :
FQB33N10LTM
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 33A D2PAK
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
33A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
52 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1630pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.75W (Ta), 127W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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