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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDMT80080DC

ON Semiconductor - FDMT80080DC

KEY Part #: K6396054

FDMT80080DC Pricing (USD) [34311PC Stock]

  • 1 pcs$1.20716
  • 3,000 pcs$1.20116
Nimewo Pati:
FDMT80080DC
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 80V.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMT80080DC electronic components. FDMT80080DC can be shipped within 24 hours after order. If you have any demands for FDMT80080DC, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMT80080DC Atribi pwodwi yo

Nimewo Pati : FDMT80080DC
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 80V
Seri : Dual Cool™, PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Ta), 254A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 8V, 10V
RD sou (Max) @ Id, Vgs : 1.35 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 273nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 20720pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta), 156W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-Dual Cool™88
Pake / Ka : 8-PowerVDFN

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