DMG4N60SCT Pricing (USD) [118621PC Stock]
- 1 pcs$0.31337
- 50 pcs$0.31181
- Nimewo Pati:
- DMG4N60SCT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET NCH 600V 4.5A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMG4N60SCT electronic components. DMG4N60SCT can be shipped within 24 hours after order. If you have any demands for DMG4N60SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4N60SCT Atribi pwodwi yo
Nimewo Pati :
DMG4N60SCT
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET NCH 600V 4.5A TO220
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.3nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
532pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
113W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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