SIGC109T120R3LEX1SA2 Pricing (USD) [4978PC Stock]
- 1 pcs$8.70077
- Nimewo Pati:
- SIGC109T120R3LEX1SA2
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1200V 100A DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies SIGC109T120R3LEX1SA2 electronic components. SIGC109T120R3LEX1SA2 can be shipped within 24 hours after order. If you have any demands for SIGC109T120R3LEX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIGC109T120R3LEX1SA2 Atribi pwodwi yo
Nimewo Pati :
SIGC109T120R3LEX1SA2
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1200V 100A DIE
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
-
Kouran - Pèseptè batman (Icm) :
300A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Pouvwa - Max :
-
Oblije chanje enèji :
-
Kalite Antre :
Standard
Gate chaje :
-
Td (on / off) @ 25 ° C :
-
Kondisyon egzamen an :
-
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
Die
Pake Aparèy Founisè :
Die
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