TSM60NB1R4CP ROG Pricing (USD) [243353PC Stock]
- 1 pcs$0.15199
- Nimewo Pati:
- TSM60NB1R4CP ROG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET N-CHANNEL 600V 3A TO252.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM60NB1R4CP ROG electronic components. TSM60NB1R4CP ROG can be shipped within 24 hours after order. If you have any demands for TSM60NB1R4CP ROG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB1R4CP ROG Atribi pwodwi yo
Nimewo Pati :
TSM60NB1R4CP ROG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N-CHANNEL 600V 3A TO252
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.4 Ohm @ 900mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.12nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
257.3pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
28.4W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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