IXYS - IXFB72N55Q2

KEY Part #: K6403163

IXFB72N55Q2 Pricing (USD) [3545PC Stock]

  • 1 pcs$13.50455
  • 25 pcs$13.43737

Nimewo Pati:
IXFB72N55Q2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 550V 72A PLUS264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Rèkteur - Single, Tiristors - TRIACs, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in IXYS IXFB72N55Q2 electronic components. IXFB72N55Q2 can be shipped within 24 hours after order. If you have any demands for IXFB72N55Q2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFB72N55Q2 Atribi pwodwi yo

Nimewo Pati : IXFB72N55Q2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 550V 72A PLUS264
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 72A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 72 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 258nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 10500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 890W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS264™
Pake / Ka : TO-264-3, TO-264AA