[1520PC Stock]
- Nimewo Pati:
- BSP110,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 100V 520MA SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - IGBTs - Modil yo and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BSP110,115 electronic components. BSP110,115 can be shipped within 24 hours after order. If you have any demands for BSP110,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP110,115 Atribi pwodwi yo
Nimewo Pati :
BSP110,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 100V 520MA SOT223
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
520mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
10 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id :
2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
40pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
6.25W (Tc)
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-73
Pake / Ka :
TO-261-4, TO-261AA
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