Toshiba Semiconductor and Storage - SSM6N35AFE,LF

KEY Part #: K6523202

SSM6N35AFE,LF Pricing (USD) [1336019PC Stock]

  • 1 pcs$0.02769

Nimewo Pati:
SSM6N35AFE,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2 N-CHANNEL 20V 250MA ES6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6N35AFE,LF electronic components. SSM6N35AFE,LF can be shipped within 24 hours after order. If you have any demands for SSM6N35AFE,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N35AFE,LF Atribi pwodwi yo

Nimewo Pati : SSM6N35AFE,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2 N-CHANNEL 20V 250MA ES6
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate, 1.2V Drive
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Ta)
RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 150mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 0.34nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 36pF @ 10V
Pouvwa - Max : 250mW
Operating Tanperati : 150°C
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6