Nimewo Pati :
SSM6N35AFE,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2 N-CHANNEL 20V 250MA ES6
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 1.2V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
250mA (Ta)
RD sou (Max) @ Id, Vgs :
1.1 Ohm @ 150mA, 4.5V
Vgs (th) (Max) @ Id :
1V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
0.34nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
36pF @ 10V
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6