ON Semiconductor - NGTG15N60S1EG

KEY Part #: K6423204

NGTG15N60S1EG Pricing (USD) [64054PC Stock]

  • 1 pcs$0.59370
  • 10 pcs$0.53099
  • 100 pcs$0.41400
  • 500 pcs$0.32350
  • 1,000 pcs$0.25539

Nimewo Pati:
NGTG15N60S1EG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 30A 117W TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Objektif espesyal, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolè (BJT) - RF, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTG15N60S1EG electronic components. NGTG15N60S1EG can be shipped within 24 hours after order. If you have any demands for NGTG15N60S1EG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTG15N60S1EG Atribi pwodwi yo

Nimewo Pati : NGTG15N60S1EG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 30A 117W TO220-3
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 30A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 15A
Pouvwa - Max : 117W
Oblije chanje enèji : 550µJ (on), 350µJ (off)
Kalite Antre : Standard
Gate chaje : 88nC
Td (on / off) @ 25 ° C : 65ns/170ns
Kondisyon egzamen an : 400V, 15A, 22 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220