NXP USA Inc. - BUK6208-40C,118

KEY Part #: K6415309

[12454PC Stock]


    Nimewo Pati:
    BUK6208-40C,118
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 40V 90A DPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Arrays ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. BUK6208-40C,118 electronic components. BUK6208-40C,118 can be shipped within 24 hours after order. If you have any demands for BUK6208-40C,118, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BUK6208-40C,118 Atribi pwodwi yo

    Nimewo Pati : BUK6208-40C,118
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 40V 90A DPAK
    Seri : TrenchMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 40V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 6.2 mOhm @ 15A, 10V
    Vgs (th) (Max) @ Id : 2.8V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 67nC @ 10V
    Vgs (Max) : ±16V
    Antre kapasite (Ciss) (Max) @ Vds : 3720pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 128W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : DPAK
    Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63