GA10JT12-247 Pricing (USD) [2103PC Stock]
- 1 pcs$10.16943
- 10 pcs$9.24469
- 25 pcs$8.55122
- 100 pcs$7.47449
- 250 pcs$6.81498
- Nimewo Pati:
- GA10JT12-247
- Manifakti:
- GeneSiC Semiconductor
- Detaye deskripsyon:
- TRANS SJT 1.2KV 10A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in GeneSiC Semiconductor GA10JT12-247 electronic components. GA10JT12-247 can be shipped within 24 hours after order. If you have any demands for GA10JT12-247, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GA10JT12-247 Atribi pwodwi yo
Nimewo Pati :
GA10JT12-247
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
TRANS SJT 1.2KV 10A
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
-
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
140 mOhm @ 10A
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
170W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AB
Pake / Ka :
TO-247-3
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