Advanced Linear Devices Inc. - ALD1110ESAL

KEY Part #: K6521911

ALD1110ESAL Pricing (USD) [14390PC Stock]

  • 1 pcs$2.86393
  • 50 pcs$1.57533

Nimewo Pati:
ALD1110ESAL
Manifakti:
Advanced Linear Devices Inc.
Detaye deskripsyon:
MOSFET 2N-CH 10V 8SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Advanced Linear Devices Inc. ALD1110ESAL electronic components. ALD1110ESAL can be shipped within 24 hours after order. If you have any demands for ALD1110ESAL, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ALD1110ESAL Atribi pwodwi yo

Nimewo Pati : ALD1110ESAL
Manifakti : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10V 8SOIC
Seri : EPAD®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : 500 Ohm @ 5V
Vgs (th) (Max) @ Id : 1.01V @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 600mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC