Toshiba Semiconductor and Storage - SSM6J511NU,LF

KEY Part #: K6417367

SSM6J511NU,LF Pricing (USD) [691214PC Stock]

  • 1 pcs$0.05916
  • 3,000 pcs$0.05886

Nimewo Pati:
SSM6J511NU,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P-CH 12V 14A UDFN6B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6J511NU,LF electronic components. SSM6J511NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J511NU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J511NU,LF Atribi pwodwi yo

Nimewo Pati : SSM6J511NU,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 12V 14A UDFN6B
Seri : U-MOSVII
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 9.1 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 47nC @ 4.5V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 3350pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-UDFNB (2x2)
Pake / Ka : 6-WDFN Exposed Pad