Nimewo Pati :
SSM6J511NU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 12V 14A UDFN6B
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
9.1 mOhm @ 4A, 8V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
3350pF @ 6V
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-UDFNB (2x2)
Pake / Ka :
6-WDFN Exposed Pad