Diodes Incorporated - BSS123TA

KEY Part #: K6419924

BSS123TA Pricing (USD) [779994PC Stock]

  • 1 pcs$0.04742
  • 3,000 pcs$0.04307

Nimewo Pati:
BSS123TA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 100V 170MA SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - FETs, MOSFETs - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Diodes Incorporated BSS123TA electronic components. BSS123TA can be shipped within 24 hours after order. If you have any demands for BSS123TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS123TA Atribi pwodwi yo

Nimewo Pati : BSS123TA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 100V 170MA SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id : 2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 20pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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