Infineon Technologies - SIGC158T120R3LEX1SA2

KEY Part #: K6423197

SIGC158T120R3LEX1SA2 Pricing (USD) [3751PC Stock]

  • 1 pcs$11.54544

Nimewo Pati:
SIGC158T120R3LEX1SA2
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 150A DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIGC158T120R3LEX1SA2 Atribi pwodwi yo

Nimewo Pati : SIGC158T120R3LEX1SA2
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 150A DIE
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : -
Kouran - Pèseptè batman (Icm) : 450A
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 150A
Pouvwa - Max : -
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : -
Td (on / off) @ 25 ° C : -
Kondisyon egzamen an : -
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die