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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVTFS6H850NTAG

ON Semiconductor - NVTFS6H850NTAG

KEY Part #: K6397229

NVTFS6H850NTAG Pricing (USD) [190901PC Stock]

  • 1 pcs$0.19375
Nimewo Pati:
NVTFS6H850NTAG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 80V 68A TRENCH 8WDFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVTFS6H850NTAG electronic components. NVTFS6H850NTAG can be shipped within 24 hours after order. If you have any demands for NVTFS6H850NTAG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVTFS6H850NTAG Atribi pwodwi yo

Nimewo Pati : NVTFS6H850NTAG
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 80V 68A TRENCH 8WDFN
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta), 68A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 4V @ 70µA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1140pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta), 107W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-WDFN (3.3x3.3)
Pake / Ka : 8-PowerWDFN

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