Nimewo Pati :
TSM2537CQ RFG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET N/P-CH 20V 11.6A/9A 6TDFN
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate, 1.8V Drive
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.6A (Tc), 9A (Tc)
RD sou (Max) @ Id, Vgs :
30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.1nC @ 4.5V, 9.8nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
677pF @ 10V, 744pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-VDFN Exposed Pad
Pake Aparèy Founisè :
6-TDFN (2x2)