PMXB360ENEAZ Pricing (USD) [735924PC Stock]
- 1 pcs$0.05026
- 5,000 pcs$0.04383
- Nimewo Pati:
- PMXB360ENEAZ
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 1.1A 3DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMXB360ENEAZ electronic components. PMXB360ENEAZ can be shipped within 24 hours after order. If you have any demands for PMXB360ENEAZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMXB360ENEAZ Atribi pwodwi yo
Nimewo Pati :
PMXB360ENEAZ
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 1.1A 3DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
450 mOhm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
130pF @ 40V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400mW (Ta), 6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN1010D-3
Pake / Ka :
3-XDFN Exposed Pad
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