Diodes Incorporated - DMN2026UVT-13

KEY Part #: K6396412

DMN2026UVT-13 Pricing (USD) [676611PC Stock]

  • 1 pcs$0.05467
  • 10,000 pcs$0.04858

Nimewo Pati:
DMN2026UVT-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 6.2A TSOT-26.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2026UVT-13 electronic components. DMN2026UVT-13 can be shipped within 24 hours after order. If you have any demands for DMN2026UVT-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2026UVT-13 Atribi pwodwi yo

Nimewo Pati : DMN2026UVT-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 6.2A TSOT-26
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 24 mOhm @ 6.2A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18.4nC @ 8V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 887pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.15W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TSOT-26
Pake / Ka : SOT-23-6 Thin, TSOT-23-6