SCT3120ALGC11 Pricing (USD) [12256PC Stock]
- 1 pcs$2.59572
- Nimewo Pati:
- SCT3120ALGC11
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET NCH 650V 21A TO247N.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Modil pouvwa chofè, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SCT3120ALGC11 electronic components. SCT3120ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3120ALGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT3120ALGC11 Atribi pwodwi yo
Nimewo Pati :
SCT3120ALGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET NCH 650V 21A TO247N
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
156 mOhm @ 6.7A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 3.33mA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 18V
Vgs (Max) :
+22V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
460pF @ 500V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
103W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N
Pake / Ka :
TO-247-3
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