[7564PC Stock]
- Nimewo Pati:
- SIS902DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 75V 4A PPAK 1212-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIS902DN-T1-GE3 electronic components. SIS902DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS902DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS902DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIS902DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 75V 4A PPAK 1212-8
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
186 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
175pF @ 38V
Pouvwa - Max :
15.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® 1212-8 Dual
Pake Aparèy Founisè :
PowerPAK® 1212-8 Dual
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