BSM180C12P2E202 Pricing (USD) [164PC Stock]
- 1 pcs$281.91240
- Nimewo Pati:
- BSM180C12P2E202
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- BSM180C12P2E202 IS A SIC SILICO.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor BSM180C12P2E202 electronic components. BSM180C12P2E202 can be shipped within 24 hours after order. If you have any demands for BSM180C12P2E202, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180C12P2E202 Atribi pwodwi yo
Nimewo Pati :
BSM180C12P2E202
Manifakti :
Rohm Semiconductor
Deskripsyon :
BSM180C12P2E202 IS A SIC SILICO
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
204A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
+22V, -6V
Antre kapasite (Ciss) (Max) @ Vds :
20000pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1360W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Module
Pake / Ka :
Module
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