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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVATS4A101PZT4G

ON Semiconductor - NVATS4A101PZT4G

KEY Part #: K6394766

NVATS4A101PZT4G Pricing (USD) [258188PC Stock]

  • 1 pcs$0.14397
  • 3,000 pcs$0.14326
Nimewo Pati:
NVATS4A101PZT4G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CHANNEL 30V 27A ATPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - Objektif espesyal, Tiristors - SCR, Diodes - Zener - Arrays and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVATS4A101PZT4G electronic components. NVATS4A101PZT4G can be shipped within 24 hours after order. If you have any demands for NVATS4A101PZT4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVATS4A101PZT4G Atribi pwodwi yo

Nimewo Pati : NVATS4A101PZT4G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CHANNEL 30V 27A ATPAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 27A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 18.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 875pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 36W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : ATPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

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