IXTA02N250HV Pricing (USD) [12004PC Stock]
- 1 pcs$3.79524
- 30 pcs$3.77636
- Nimewo Pati:
- IXTA02N250HV
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 2500V 0.2A TO263.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTA02N250HV electronic components. IXTA02N250HV can be shipped within 24 hours after order. If you have any demands for IXTA02N250HV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA02N250HV Atribi pwodwi yo
Nimewo Pati :
IXTA02N250HV
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 2500V 0.2A TO263
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
2500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
450 Ohm @ 50mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
116pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
83W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263AB
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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