Infineon Technologies - IPP120P04P4L03AKSA1

KEY Part #: K6417424

IPP120P04P4L03AKSA1 Pricing (USD) [30762PC Stock]

  • 1 pcs$1.22515
  • 10 pcs$1.05152
  • 100 pcs$0.84502
  • 500 pcs$0.65724
  • 1,000 pcs$0.54457

Nimewo Pati:
IPP120P04P4L03AKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH 40V 120A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP120P04P4L03AKSA1 Atribi pwodwi yo

Nimewo Pati : IPP120P04P4L03AKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH 40V 120A TO220-3
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 340µA
Chaje Gate (Qg) (Max) @ Vgs : 234nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 15000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 136W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3-1
Pake / Ka : TO-220-3