IKD06N60RFATMA1 Pricing (USD) [143804PC Stock]
- 1 pcs$0.25721
- 2,500 pcs$0.24569
- 5,000 pcs$0.23399
- Nimewo Pati:
- IKD06N60RFATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 600V 12A 100W PG-TO252-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IKD06N60RFATMA1 electronic components. IKD06N60RFATMA1 can be shipped within 24 hours after order. If you have any demands for IKD06N60RFATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IKD06N60RFATMA1 Atribi pwodwi yo
Nimewo Pati :
IKD06N60RFATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 600V 12A 100W PG-TO252-3
Seri :
TrenchStop®
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
12A
Kouran - Pèseptè batman (Icm) :
18A
Vce (sou) (Max) @ Vge, Ic :
2.5V @ 15V, 6A
Pouvwa - Max :
100W
Oblije chanje enèji :
90µJ (on), 90µJ (off)
Kalite Antre :
Standard
Gate chaje :
48nC
Td (on / off) @ 25 ° C :
7ns/106ns
Kondisyon egzamen an :
400V, 6A, 23 Ohm, 15V
Ranvèse Tan Reverse (trr) :
48ns
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
PG-TO252-3
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