[73PC Stock]
- Nimewo Pati:
- IRF6629TR1PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 25V 29A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Tiristors - SCR, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6629TR1PBF electronic components. IRF6629TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6629TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6629TR1PBF Atribi pwodwi yo
Nimewo Pati :
IRF6629TR1PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 25V 29A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
29A (Ta), 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.1 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
51nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4260pF @ 13V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 100W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ MX
Pake / Ka :
DirectFET™ Isometric MX
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