FDC637BNZ Pricing (USD) [814007PC Stock]
- 1 pcs$0.04567
- 3,000 pcs$0.04544
- Nimewo Pati:
- FDC637BNZ
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 20V 6.2A 6-SSOT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDC637BNZ electronic components. FDC637BNZ can be shipped within 24 hours after order. If you have any demands for FDC637BNZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDC637BNZ Atribi pwodwi yo
Nimewo Pati :
FDC637BNZ
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 20V 6.2A 6-SSOT
Seri :
PowerTrench®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
24 mOhm @ 6.2A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
895pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SuperSOT™-6
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
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