DMN1004UFV-7 Pricing (USD) [400742PC Stock]
- 1 pcs$0.09230
- 2,000 pcs$0.08261
- Nimewo Pati:
- DMN1004UFV-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 12V 70A POWERDI3333.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - RF, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Transistors - JFETs and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN1004UFV-7 electronic components. DMN1004UFV-7 can be shipped within 24 hours after order. If you have any demands for DMN1004UFV-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1004UFV-7 Atribi pwodwi yo
Nimewo Pati :
DMN1004UFV-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 12V 70A POWERDI3333
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
3.8 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
47nC @ 8V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
2385pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.9W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI3333-8
Pake / Ka :
8-PowerVDFN
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