[3872PC Stock]
- Nimewo Pati:
- APTM100H80FT1G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- MOSFET 4N-CH 1000V 11A SP1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Tiristors - SCR, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APTM100H80FT1G electronic components. APTM100H80FT1G can be shipped within 24 hours after order. If you have any demands for APTM100H80FT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100H80FT1G Atribi pwodwi yo
Nimewo Pati :
APTM100H80FT1G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 4N-CH 1000V 11A SP1
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
4 N-Channel (H-Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
1000V (1kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A
RD sou (Max) @ Id, Vgs :
960 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
150nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3876pF @ 25V
Pouvwa - Max :
208W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake / Ka :
SP1
Pake Aparèy Founisè :
SP1
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