Infineon Technologies - IPI084N06L3GXKSA1

KEY Part #: K6419247

IPI084N06L3GXKSA1 Pricing (USD) [99327PC Stock]

  • 1 pcs$0.39366
  • 500 pcs$0.34163

Nimewo Pati:
IPI084N06L3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI084N06L3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPI084N06L3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH TO262-3
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 8.4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 34µA
Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4900pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 79W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3-1
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA