Nimewo Pati :
SQ2310ES-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 20V 6A SOT23
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
30 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
485pF @ 10V
Disipasyon Pouvwa (Max) :
2W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236
Pake / Ka :
TO-236-3, SC-59, SOT-23-3