TK35E10K3(S1SS-Q) Pricing (USD) [70977PC Stock]
- 1 pcs$0.60894
- 50 pcs$0.60591
- Nimewo Pati:
- TK35E10K3(S1SS-Q)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 100V 35A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK35E10K3(S1SS-Q) electronic components. TK35E10K3(S1SS-Q) can be shipped within 24 hours after order. If you have any demands for TK35E10K3(S1SS-Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35E10K3(S1SS-Q) Atribi pwodwi yo
Nimewo Pati :
TK35E10K3(S1SS-Q)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 100V 35A TO-220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
-
Teknoloji :
-
Drenaj nan Voltage Sous (Vdss) :
-
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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