[12524PC Stock]
- Nimewo Pati:
- STL12N10F7
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- N-CHANNEL 100V 12A STRIPFET F7 P.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STL12N10F7 electronic components. STL12N10F7 can be shipped within 24 hours after order. If you have any demands for STL12N10F7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STL12N10F7 Atribi pwodwi yo
Nimewo Pati :
STL12N10F7
Manifakti :
STMicroelectronics
Deskripsyon :
N-CHANNEL 100V 12A STRIPFET F7 P
Seri :
STripFET™ F7
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
44A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13.3 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1820pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
52W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerFlat™ (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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