IXYS - IXYX100N120B3

KEY Part #: K6422080

IXYX100N120B3 Pricing (USD) [5366PC Stock]

  • 1 pcs$7.67890
  • 30 pcs$6.09841

Nimewo Pati:
IXYX100N120B3
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 1200V 188A 1150W PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Modil pouvwa chofè, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in IXYS IXYX100N120B3 electronic components. IXYX100N120B3 can be shipped within 24 hours after order. If you have any demands for IXYX100N120B3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXYX100N120B3 Atribi pwodwi yo

Nimewo Pati : IXYX100N120B3
Manifakti : IXYS
Deskripsyon : IGBT 1200V 188A 1150W PLUS247
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 225A
Kouran - Pèseptè batman (Icm) : 530A
Vce (sou) (Max) @ Vge, Ic : 2.6V @ 15V, 100A
Pouvwa - Max : 1150W
Oblije chanje enèji : 7.7mJ (on), 7.1mJ (off)
Kalite Antre : Standard
Gate chaje : 250nC
Td (on / off) @ 25 ° C : 30ns/153ns
Kondisyon egzamen an : 600V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : PLUS247™-3